種類繁多的雙極晶體管助您輕松滿足系統(tǒng)需求。產(chǎn)品線涵蓋基礎(chǔ)雙極晶體管模塊，以及一系列節(jié)省空間和成本的帶電阻晶體管，直至我們突破性的小信號(hào)系列低壓降電壓器件。
我們豐富的二極管產(chǎn)品組合為您提供當(dāng)今市場(chǎng)所需的靈活性——無論是簡(jiǎn)單的齊納二極管、高效的肖特基整流器、快速恢復(fù)二極管還是可控雪崩開關(guān)二極管。
涵蓋靜電放電保護(hù)、瞬態(tài)電壓抑制器件、共模扼流圈及電磁干擾濾波器，Nexperia的保護(hù)技術(shù)持續(xù)升級(jí)，在業(yè)界最小封裝中提供最高級(jí)別的防護(hù)。
Nexperia提供種類豐富的低/中壓（12-200 V）P溝道和N溝道硅MOSFET產(chǎn)品組合，采用多種節(jié)省空間且高效的封裝方案。
Nexperia的1200V碳化硅（SiC）MOSFET重新定義了安全、穩(wěn)健且可靠的電源開關(guān)標(biāo)準(zhǔn)，成為電動(dòng)汽車充電基礎(chǔ)設(shè)施、光伏逆變器及電機(jī)驅(qū)動(dòng)領(lǐng)域的首選產(chǎn)品。
針對(duì)各類高壓（650 V）和低壓（40-150 V）應(yīng)用場(chǎng)景，Nexperia氮化鎵場(chǎng)效應(yīng)晶體管憑借更低的導(dǎo)通損耗與開關(guān)損耗，實(shí)現(xiàn)了最快速的過渡/開關(guān)能力、最佳的功率效率以及更高的功率密度。
為滿足高效高壓電源轉(zhuǎn)換和電機(jī)驅(qū)動(dòng)日益增長(zhǎng)的需求，Nexperia的IGBT采用堅(jiān)固且經(jīng)濟(jì)高效的載流子存儲(chǔ)溝槽柵極（CSTBT）先進(jìn)場(chǎng)截止（FS）結(jié)構(gòu)。
除全面的邏輯功能、模擬開關(guān)和I2C接口產(chǎn)品組合外，Nexperia還提供日益豐富的功率IC產(chǎn)品線，助力打造創(chuàng)新解決方案，專注于降低客戶物料清單成本，提升系統(tǒng)效率與可靠性。
為助力實(shí)現(xiàn)互聯(lián)電動(dòng)及混合動(dòng)力車輛，Nexperia半導(dǎo)體提供全系列符合AEC-Q100/Q101認(rèn)證的器件，涵蓋我們完整的產(chǎn)品組合，這些產(chǎn)品兼具高效能與高效設(shè)計(jì)特性。
The single-ended primary-inductor converter (SEPIC) is a DC/DC converter topology that allows the electrical potential (voltage) at its output to be greater than, less than, or equal to that at its input. The output of the SEPIC is controlled by the duty cycle of the control switch. Essentially similar to a traditional buck-boost converter, but with three primary advantages. It has a non-inverted output (the output has the same voltage polarity as the input), uses a series capacitor to couple energy from the input to the output (and thus can respond more gracefully to a short-circuit output), and is capable of true shutdown.
Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.
