可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PMPB215ENEA | PMPB215ENEAX | 934067477115 | SOT1220 | 訂單產(chǎn)品 |
| PMPB215ENEA | PMPB215ENEAHP | 934067477128 | SOT1220 | 訂單產(chǎn)品 |
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Click here for more informationPMPB215ENEA
80 V, single N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB215ENEA | SOT1220 | DFN2020MD?6 | Production | N | 1 | 80 | 230 | 275 | 150 | 2.8 | 0.9 | 4.8 | 3.3 | 1.7 | Y | 215 | 25 | 2013-12-18 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMPB215ENEA | PMPB215ENEAX (934067477115) |
Active | 2B |
DFN2020MD?6 (SOT1220) |
SOT1220 | SOT1220_115 | |
| PMPB215ENEAHP (934067477128) |
Active | 2B | 暫無(wú)信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 NXP's ASLx500SHN and ASLx41xSHN Evaluation Board is designed to drive six LED strings with 150 mA to 1.6 A and 2 V to 60 V LED string voltage. Among the numerous Nexperia products on-board in the boost converter stage are 80 V MOSFETs in LFPAK56 and 100 V Schottky Rectifiers. The buck converter incorporates 80 V DFN2020 MOSFETs and 54 V TVS diodes.
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類型 Reference design
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Quick links
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Shop link
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環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMPB215ENEA | PMPB215ENEAX | PMPB215ENEA |
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| PMPB215ENEA | PMPB215ENEAHP | PMPB215ENEA |
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文檔 (23)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMPB215ENEA | 80 V, single N-channel Trench MOSFET | Data sheet | 2017-05-04 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_asset_document_brochure_autoDFN_CN_LR | 小巧輕便的汽車 二極管和晶體管 | Brochure | 2022-04-26 |
| Nexperia_asset_document_brochure_autoDFN_CN_LR | 小巧輕便的汽車 二極管和晶體管 | Brochure | 2022-04-26 |
| SOT1220 | 3D model for products with SOT1220 package | Design support | 2018-08-23 |
| Nexperia_AutoDFN_factsheet_2022 | Small & light automotive diodes and transistors | Leaflet | 2022-04-13 |
| Nexperia_AutoDFN_factsheet_2022 | Small & light automotive diodes and transistors | Leaflet | 2022-04-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020MD-6_SOT1220_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1220 | plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
| SOT1220_115 | DFN2020MD-6; Reel pack for SMD, 7''; Q2/T3 product orientation | Packing information | 2020-04-28 |
| nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
| nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
| PMPB215ENEA_19_04_2013 | PMPB215ENEA Spice model | SPICE model | 2013-12-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMPB215ENEA_19_04_2013 | PMPB215ENEA Spice model | SPICE model | 2013-12-13 |
| SOT1220 | 3D model for products with SOT1220 package | Design support | 2018-08-23 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PMPB215ENEA | PMPB215ENEAX | 934067477115 | Active | SOT1220_115 | 3,000 |
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| PMPB215ENEA | PMPB215ENEAHP | 934067477128 | Active | 暫無(wú)信息 | 10,000 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.