可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| 2N7002BKV | 2N7002BKV,115 | 934064288115 | SOT666 | 訂單產品 |
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Click here for more information2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
Applications
Relay driver
High-speed line driver
Low-side loadswich
Switching circuits
參數類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | VESD (kV) (kV) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth @25 C [min] (V) | VGSth [typ] (V) | VGSth [max] @25 C (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N7002BKV | SOT666 | SOT666 | Production | N | 2 | 60 | 20 | 1600 | 2000 | 2000 | 150 | 0.34 | 0.1 | 0.5 | 0.35 | 1.1 | 1.6 | 2.1 | N | 33 | 7 | 2011-01-24 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 2N7002BKV | 2N7002BKV,115 (934064288115) |
Active | ZG |
(SOT666) |
SOT666 | SOT666_115 |
文檔 (17)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| 2N7002BKV | 60 V, 340 mA dual N-channel Trench MOSFET | Data sheet | 2024-10-17 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT666_mk | plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Marcom graphics | 2017-01-28 |
| SOT666 | plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Package information | 2022-06-01 |
| SOT666_115 | Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| 2N7002BKV_8_18_2010 | 2N7002BKV_8_18_2010 Spice parameter | SPICE model | 2012-04-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| 2N7002BKV_8_18_2010 | 2N7002BKV_8_18_2010 Spice parameter | SPICE model | 2012-04-13 |
| SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 2N7002BKV | 2N7002BKV,115 | 934064288115 | Active | SOT666_115 | 4,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.