可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 74AHC374D | 74AHC374D,118 | 935262680118 | SOT163-1 | 訂單產(chǎn)品 |
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Click here for more information74AHC374D
Octal D-type flip-flop; positive edge-trigger; 3-state
The 74AHC374; 74AHCT374 is an octal positive?-?edge triggered D?-?type flip?-?flop with 3?-?state outputs. The device features a clock (CP) and output enable (OE) inputs. The flip?-?flops will store the state of their individual D?-?inputs that meet the set?-?up and hold time requirements on the LOW?-?to?-?HIGH clock (CP) transition. A HIGH on OE causes the outputs to assume a high?-?impedance OFF?-?state. Operation of the OE input does not affect the state of the flip?-?flops. Inputs are overvoltage tolerant. The 74AHCT374 device features TTL compatible inputs that are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.
Alternatives
Features and benefits
Balanced propagation delays
All inputs have Schmitt-trigger actions
Wide supply voltage range from 2.0 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low power dissipation
Common 3-state output enable input
Input levels:
For 74AHC374: CMOS level
For 74AHCT374: TTL level
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 74AHC374D | 2.0?-?5.5 | CMOS | ± 8 | 4.4 | 185 | low | -40~125 | 84 | 27 | 61 | SO20 |
PCB Symbol, Footprint and 3D Model
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封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AHC374D | 74AHC374D,118 (935262680118) |
Active | 74AHC374D |
SO20 (SOT163-1) |
SOT163-1 |
WAVE_BG-BD-1
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SOT163-1_118 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74AHC374D | 74AHC374D,118 | 74AHC374D |
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Series
文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74AHC_AHCT374 | Octal D-type flip-flop; positive edge-trigger; 3-state | Data sheet | 2023-09-04 |
| AN11106 | Pin FMEA for AHC/AHCT family | Application note | 2019-01-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT163-1 | 3D model for products with SOT163-1 package | Design support | 2020-01-22 |
| ahc374 | ahc374 IBIS model | IBIS model | 2013-04-08 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT163-1 | plastic, small outline package; 20 leads; 1.27 mm pitch; 12.8 mm x 7.5 mm x 2.65 mm body | Package information | 2024-11-15 |
| SOT163-1_118 | SO20; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2022-08-01 |
| 74AHC374D_Nexperia_Product_Reliability | 74AHC374D Nexperia Product Reliability | Quality document | 2025-03-20 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
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訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74AHC374D | 74AHC374D,118 | 935262680118 | Active | SOT163-1_118 | 2,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.