可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| 74HC30PW | 74HC30PW,118 | 935189030118 | SOT402-1 | 訂單產(chǎn)品 |
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Click here for more information74HC30PW
8-input NAND gate
The 74HC30; 74HCT30 is an 8-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
Alternatives
Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V
CMOS low power dissipation
High noise immunity
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Complies with JEDEC standards:
- JESD8C (2.7 V to 3.6 V)
- JESD7A (2.0 V to 6.0 V)
Input levels:
For 74HC30: CMOS level
For 74HCT30: TTL level
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74HC30PW | 2.0?-?6.0 | CMOS | ± 5.2 | 12 | 36 | 1 | low | -40~125 | 126 | 2.8 | 50.4 | TSSOP14 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HC30PW | 74HC30PW,118 (935189030118) |
Active | HC30 |
TSSOP14 (SOT402-1) |
SOT402-1 |
SSOP-TSSOP-VSO-WAVE
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SOT402-1_118 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74HC30PW | 74HC30PW,118 | 74HC30PW |
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Series
文檔 (11)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74HC_HCT30 | 8-input NAND gate | Data sheet | 2024-03-13 |
| AN11044 | Pin FMEA 74HC/74HCT family | Application note | 2019-01-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT402-1 | 3D model for products with SOT402-1 package | Design support | 2023-02-02 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSSOP14_SOT402-1_mk | plastic, thin shrink small outline package; 14 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.1 mm body | Marcom graphics | 2017-01-28 |
| SOT402-1 | plastic, thin shrink small outline package; 14 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.2 mm body | Package information | 2023-11-07 |
| SOT402-1_118 | TSSOP14; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2025-01-16 |
| 74HC30PW_Nexperia_Product_Reliability | 74HC30PW Nexperia Product Reliability | Quality document | 2025-03-20 |
| HCT_USER_GUIDE | HC/T User Guide | User manual | 1997-10-31 |
| SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT402-1 | 3D model for products with SOT402-1 package | Design support | 2023-02-02 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| 74HC30PW | 74HC30PW,118 | 935189030118 | Active | SOT402-1_118 | 2,500 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.