可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 74LVC1G66GS | 74LVC1G66GS,132 | 935292918132 | SOT1202 | 訂單產(chǎn)品 |
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Click here for more information74LVC1G66GS
Bilateral switch
The 74LVC1G66 is a single-pole, single-throw analog switch with two input/output terminals (nY and nZ) and a digital enable input (nE). When nE is LOW, the analog switch is turned off. Control inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.
Schmitt-trigger action at control inputs makes the circuit tolerant of slower input rise and fall times.
Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
Very low ON resistance:
7.5 Ω (typical) at VCC = 2.7 V
6.5 Ω (typical) at VCC = 3.3 V
6 Ω (typical) at VCC = 5 V
Switch current capability of 32 mA
High noise immunity
CMOS low power consumption
TTL interface compatibility at 3.3 V
Overvoltage tolerant control inputs to 5.5 V
Latch-up performance meets requirements of JESD78 Class I
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
參數(shù)類型
| 型號 | Configuration | VCC (V) | Logic switching levels | RON (Ω) | RON(FLAT) (Ω) | f(-3dB) (MHz) | THD (%) | Xtalk (dB) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74LVC1G66GS | SPST-NO | 1.65?-?5.5 | CMOS/LVTTL | 15 | 1.5 | 440 | 0.001 | - | very low | -40~125 | 302 | 23.3 | 200 | XSON6 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVC1G66GS | 74LVC1G66GS,132 (935292918132) |
Active | VL |
XSON6 (SOT1202) |
SOT1202 | SOT1202_132 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVC1G66GS | 74LVC1G66GS,132 | 74LVC1G66GS |
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文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74LVC1G66 | Bilateral switch | Data sheet | 2024-09-03 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
| SOT1202 | 3D model for products with SOT1202 package | Design support | 2023-02-02 |
| lvc1g66 | 74LVC1G66 IBIS model | IBIS model | 2015-02-19 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT1202 | plastic, leadless extremely thin small outline package; 6 terminals; 0.35 mm pitch; 1 mm x 1mm x 0.35 mm body | Package information | 2022-06-01 |
| SOT1202_132 | XSON6; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-04-21 |
| 74LVC1G66GS_Nexperia_Product_Reliability | 74LVC1G66GS Nexperia Product Reliability | Quality document | 2025-03-20 |
| MAR_SOT1202 | MAR_SOT1202 Topmark | Top marking | 2013-06-03 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
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訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74LVC1G66GS | 74LVC1G66GS,132 | 935292918132 | Active | SOT1202_132 | 5,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.