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Click here for more informationCBTD3384DK
10-bit level shifting bus switch with 5-bit output enables
The CBTD3384 is a dual 5-pole, single-throw bus switch. The device features two output enable inputs (nOE) that each control five switch channels. The switches are disabled when the associated nOE input is HIGH. CBTD3384 is specifically designed for 5 V to 3.3 V level shifting applications. This device is fully specified for partial power down applications using IOFF.
Features and benefits
Designed to be used in 5 V to 3.3 V level shifting applications with internal diode
5 ? switch connection between two ports
Direct interface with TTL levels
IOFF circuitry provides partial Power-down mode operation
Latch-up protection exceeds 100 mA per JESD78
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C
參數(shù)類型
| 型號 | Package name |
|---|---|
| CBTD3384DK | SSOP24 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| CBTD3384DK | CBTD3384DK,118 (935270732118) |
Obsolete | CBTD3384DK Standard Procedure Standard Procedure | no package information | |||
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| CBTD3384DK | CBTD3384DK,118 | CBTD3384DK |
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Series
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| cbtd3384 | cbtd3384 IBIS model | IBIS model | 2013-04-08 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.