可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ | 934666222127 | SOT429-3 | 訂單產品 |
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Click here for more informationGAN111-650WSB
650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package
The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or +12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Applications
Hard and soft switching converters for industrial and datacom power
AC/DC Bridgeless totem-pole PFC
DC/DC High-frequency resonant converters
Datacom and telecom (AC/DC and DC/DC) converters
Solar (PV) inverters
Servo motor drives
TV PSU and LED drivers
參數(shù)類型
| 型號 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN111‑650WSB | SOT429-3 | TO-247-3L | Production | cascode | N | 1 | 650 | 114 | 175 | 21 | 0.8 | 4.9 | 107 | 65 | 4.1 | N | 336 | 49 | 2024-07-03 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GAN111‑650WSB | GAN111‑650WSBQ (934666222127) |
Active | GAN111 650WSB |
TO‑247‑3L (SOT429-3) |
SOT429-3 | 暫無信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 The NX-HB-GAN111UL half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650V Cascode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The voltage input and output can operate at up to 400 VDC, with a power output > 2000 Watts.
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類型 Evaluation board
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Quick links
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Shop link
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文檔 (11)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GAN111-650WSB | 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2024-06-24 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT429-3 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2023-12-07 |
| GAN111-650WSB_models_LTspice | GAN111-650WSB LTspice model | SPICE model | 2025-10-06 |
| GAN111-650WSB_models_SIMetrix | GAN111-650WSB SIMetrix model | SPICE model | 2025-10-06 |
| CauerModel_GAN111-650WSB | Cauer model GAN111-650WSB | Thermal model | 2024-07-23 |
| FosterModel_GAN111-650WSB | Foster model GAN111-650WSB | Thermal model | 2024-07-23 |
| GAN111-650WSB | GAN111-650WSB RC thermal model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Cauer | GAN111-650WSB Cauer model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Foster | GAN111-650WSB Foster model | Thermal model | 2024-07-23 |
| UM90045 | NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide | User manual | 2025-02-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GAN111-650WSB_models_LTspice | GAN111-650WSB LTspice model | SPICE model | 2025-10-06 |
| GAN111-650WSB_models_SIMetrix | GAN111-650WSB SIMetrix model | SPICE model | 2025-10-06 |
| CauerModel_GAN111-650WSB | Cauer model GAN111-650WSB | Thermal model | 2024-07-23 |
| FosterModel_GAN111-650WSB | Foster model GAN111-650WSB | Thermal model | 2024-07-23 |
| GAN111-650WSB | GAN111-650WSB RC thermal model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Cauer | GAN111-650WSB Cauer model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Foster | GAN111-650WSB Foster model | Thermal model | 2024-07-23 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GAN111‑650WSB | GAN111‑650WSBQ | 934666222127 | Active | 暫無信息 | 300 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.