可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| MMBZ33VAL-Q | MMBZ33VAL-QR | 934664945215 | SOT23 | 訂單產(chǎn)品 |
| MMBZ33VAL-Q | MMBZ33VAL-QVL | 934664945235 | SOT23 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationMMBZ33VAL-Q
Low capacitance unidirectional double ESD protection diode
Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines.
Features and benefits
Unidirectional ESD protection of two lines
Bidirectional ESD protection of one line
Low diode capacitance: Cd ≤ 55 pF
Rated peak pulse power: PPPM = 40 W
Ultra low leakage current: IRM = 5 nA
ESD protection up to 30 kV (contact discharge)
IEC 61000-4-2; level 4 (ESD)
IEC 61643-321
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Automotive electronic control units
Portable electronics
參數(shù)類型
| 型號(hào) | Package version | PPPM @10/1000 μs [max] (W) | VRWM (V) (V) | Configuration | Nr of lines | VBR [min] (V) | VBR [max] (V) | VCL @ IPPM 10/1000 μs [max] (V) | IPPM @10/1000 μs [max] (A) | IRM [max] (μA) | Tj [max] (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| MMBZ33VAL‑Q | SOT23 | 40 | 26 | Unidirectional | 2 | 31.35 | 34.65 | 46 | 0.87 | 0.005 | 150 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| MMBZ33VAL‑Q | MMBZ33VAL‑QR (934664945215) |
Active | %H6 |
(SOT23) |
SOT23 |
WAVE_BG-BD-1
|
SOT23_215 |
| MMBZ33VAL‑QVL (934664945235) |
Active | %H6 | SOT23_235 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| MMBZ33VAL‑Q | MMBZ33VAL‑QR | MMBZ33VAL-Q |
|
|
| MMBZ33VAL‑Q | MMBZ33VAL‑QVL | MMBZ33VAL-Q |
|
|
文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| MMBZ33VAL-Q | Low capacitance unidirectional double ESD protection diode | Data sheet | 2022-06-14 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT23_mk | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT23 | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Package information | 2022-10-12 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2025-01-20 |
| SOT23_235 | Reel pack for SMD, 11"; Q3/T4 product orientation | Packing information | 2020-06-01 |
| MMBZ33VAL-Q_Nexperia_Product_Reliability | MMBZ33VAL-Q Nexperia Product Reliability | Quality document | 2025-05-30 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.