可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PESD12VY1BSF | PESD12VY1BSFYL | 934665303315 | SOD962-2 | 訂單產(chǎn)品 |
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Click here for more informationPESD12VY1BSF
Extremely low capacitance bidirectional ESD protection diode
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface- Mounted Device (SMD) package, designed to protect one signal line from the damage caused by ESD and other transients.
Features and benefits
Bidirectional ESD protection of one line
VRWM = 12 V
IEC 61000-4-5 (surge): IPP = 7 A peak pulse (average measured)
Extremely low diode capacitance Cd = 0.37 pF typical
Extremely low clamping voltage to protect sensitive I/Os
Extremely low inductance protection path to ground
IEC 61000-4-2: 16.2 kV (average measured)
Holding voltage Vh = 7.8 V
Ultra small SMD package
Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
USB2.0, USB3.2 and HDMI2.0 data lines
參數(shù)類型
| 型號(hào) | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|---|---|
| PESD12VY1BSF | DSN0603-2 | 1 | Bidirectional | 12 | 0.37 | 16.2 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD12VY1BSF | PESD12VY1BSFYL (934665303315) |
Active | 6F |
DSN0603-2 (SOD962-2) |
SOD962-2 | SOD962-2_315 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PESD12VY1BSF | PESD12VY1BSFYL | PESD12VY1BSF |
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Series
文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD12VY1BSF_SDS | Extremely low capacitance bidirectional ESD protection diode | Short data sheet | 2023-03-29 |
| AN11046 | Recommendations for PCB assembly of DSN0603-2 | Application note | 2021-04-12 |
| AN11046 | Recommendations for PCB assembly of DSN0603-2 | Application note | 2021-04-12 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD962-2 | 3D model for products with SOD962-2 package | Design support | 2023-02-02 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DSN0603-2_SOD962-2_mk | silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 mm x 0.3 mm x 0.3 mm body | Marcom graphics | 2017-01-28 |
| SOD962-2 | silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 mm x 0.3 mm x 0.3 mm body | Package information | 2021-01-06 |
| SOD962-2_315 | DSN0603-2 ; Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2020-04-21 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOD962-2 | 3D model for products with SOD962-2 package | Design support | 2023-02-02 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PESD12VY1BSF | PESD12VY1BSFYL | 934665303315 | Active | SOD962-2_315 | 9,000 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.