可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PESD24VS2UT | PESD24VS2UT,215 | 934057612215 | SOT23 | 訂單產(chǎn)品 |
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Double ESD protection diode
Unidirectional double ESD protection diode in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage.
Alternatives
Features and benefits
Unidirectional ESD protection of up to two lines
Max. peak pulse power: Ppp = 160 W at tp = 8/20 us
Low clamping voltage: V(CL)R = 70 V at Ipp = 3 A
Ultra-low reverse leakage current: IRM < 20 nA
ESD protection > 23 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); Ipp = 3 A at tp = 8/20 us.
Applications
Computers and peripherals
Communication systems
Audio and video equipment
High speed data lines
Parallel ports
參數(shù)類型
| 型號(hào) | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|---|---|
| PESD24VS2UT | SOT23 | 2 | Unidirectional | 24 | 23 | 23 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD24VS2UT | PESD24VS2UT,215 (934057612215) |
Active | %U4 |
(SOT23) |
SOT23 |
WAVE_BG-BD-1
|
SOT23_215 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PESD24VS2UT | PESD24VS2UT,215 | PESD24VS2UT |
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文檔 (15)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD24VS2UT | Double ESD protection diode | Data sheet | 2023-04-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT23_mk | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT23 | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Package information | 2022-10-12 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2025-01-20 |
| PESD24VS2UT_Nexperia_Product_Reliability | PESD24VS2UT Nexperia Product Reliability | Quality document | 2025-05-30 |
| PESD24VS2UT | PESD24VS2UT SPICE model | SPICE model | 2012-07-22 |
| PESD24VS2UT | PESD24VS2UT SPICE model | SPICE model | 2025-10-11 |
| PESD24VS2UT | Cad-Symbol of PESD24VS2UT | Software | 2008-11-20 |
| PESD5V2S2UT | Cad-Symbol of PESD5V2S2UT | Software | 2008-11-20 |
| PESD5V2S2UT_G | Cad-Symbol of PESD5V2S2UT_G | Software | 2008-11-20 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD24VS2UT | PESD24VS2UT SPICE model | SPICE model | 2012-07-22 |
| PESD24VS2UT | PESD24VS2UT SPICE model | SPICE model | 2025-10-11 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PESD24VS2UT | PESD24VS2UT,215 | 934057612215 | Active | SOT23_215 | 3,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.