可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| PESD30VV1BSF | PESD30VV1BSFYL | 934666114315 | SOD962-2 | 訂單產(chǎn)品 |
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Click here for more informationPESD30VV1BSF
Very low capacitance high voltage bidirectional ESD protection diode
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DSN0603-2 (SOD962) Surface-Mounted Device (SMD) package.
Features and benefits
Bidirectional ESD protection of one line
Ultra small leadless package with a height of 0.3 mm
IEC 61000-4-5 (surge): IPP = 2.5 A peak pulse (average measured)
High reverse standoff voltage: VRWM = 30 V
Low capacitance: Cd = 4.8 pF (typical)
ESD protection up to 15 kV
Applications
ESD protection for Type C SBU and CC lines and other high voltage applications in Consumer, Mobile and Computer environment.
參數(shù)類(lèi)型
| 型號(hào) | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|---|---|
| PESD30VV1BSF | DSN0603-2 | 1 | Bidirectional | 30 | 4.8 | 15 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD30VV1BSF | PESD30VV1BSFYL (934666114315) |
Active | 3T |
DSN0603-2 (SOD962-2) |
SOD962-2 | SOD962-2_315 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PESD30VV1BSF | PESD30VV1BSFYL | PESD30VV1BSF |
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文檔 (11)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PESD30VV1BSF | Very low capacitance high voltage bidirectional ESD protection diode | Data sheet | 2024-04-24 |
| AN11046 | Recommendations for PCB assembly of DSN0603-2 | Application note | 2021-04-12 |
| AN11046 | Recommendations for PCB assembly of DSN0603-2 | Application note | 2021-04-12 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD962-2 | 3D model for products with SOD962-2 package | Design support | 2023-02-02 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DSN0603-2_SOD962-2_mk | silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 mm x 0.3 mm x 0.3 mm body | Marcom graphics | 2017-01-28 |
| SOD962-2 | silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 mm x 0.3 mm x 0.3 mm body | Package information | 2021-01-06 |
| SOD962-2_315 | DSN0603-2 ; Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2020-04-21 |
| PESD30VV1BSF_Nexperia_Product_Reliability | PESD30VV1BSF Nexperia Product Reliability | Quality document | 2025-05-30 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| SOD962-2 | 3D model for products with SOD962-2 package | Design support | 2023-02-02 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| PESD30VV1BSF | PESD30VV1BSFYL | 934666114315 | Active | SOD962-2_315 | 9,000 |
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樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.