可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PESD5V0V1BA | PESD5V0V1BA,115 | 934063244115 | SOD323 | 訂單產(chǎn)品 |
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Very low capacitance bidirectional ESD protection diode
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients.
Alternatives
Features and benefits
Bidirectional ESD protection of one line
Very low diode capacitance: Cd = 11 pF
Max. peak pulse power: PPPM = 45 W
Low clamping voltage: VCL = 12.5 V
Ultra low leakage current: IRM < 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 4.8 A
Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
SIM card protection
Communication systems
Portable electronics
10/100 Mbit/s Ethernet
參數(shù)類型
| 型號(hào) | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|---|---|
| PESD5V0V1BA | SOD323 | 1 | Bidirectional | 5 | 11 | 30 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD5V0V1BA | PESD5V0V1BA,115 (934063244115) |
Active | 1K |
(SOD323) |
SOD323 |
WAVE_BG-BD-1
|
SOD323_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PESD5V0V1BA | PESD5V0V1BA,115 | PESD5V0V1BA |
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文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD5V0V1BA | Very low capacitance bidirectional ESD protection diode | Data sheet | 2023-03-31 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD323 | 3D model for products with SOD323 package | Design support | 2022-11-04 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOD323_mk | plastic, surface-mounted package; 2 leads; 1.3 mm pitch; 1.7 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
| SOD323 | plastic, surface-mounted package; 2 leads; 1.3 mm pitch; 1.7 mm x 1.25 mm x 0.95 mm body | Package information | 2022-05-27 |
| SOD323_115 | Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2025-01-20 |
| PESD5V0V1BA_Nexperia_Product_Reliability | PESD5V0V1BA Nexperia Product Reliability | Quality document | 2025-05-30 |
| PESD5V0V1BA | PESD5V0V1BA SPICE model | SPICE model | 2012-07-22 |
| PESD5V0V1BA | PESD5V0V1BA SPICE model | SPICE model | 2025-10-11 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD5V0V1BA | PESD5V0V1BA SPICE model | SPICE model | 2012-07-22 |
| PESD5V0V1BA | PESD5V0V1BA SPICE model | SPICE model | 2025-10-11 |
| SOD323 | 3D model for products with SOD323 package | Design support | 2022-11-04 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PESD5V0V1BA | PESD5V0V1BA,115 | 934063244115 | Active | SOD323_115 | 3,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.