可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PMX800UPE | PMX800UPEZ | 934662516317 | SOT8013 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPMX800UPE
30 V, P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
Features and benefits
Low threshold voltage
Leadless ultra small package 0.63 x 0.33 x 0.25 mm
Trench MOSFET technology
Low profile (0.25 mm)
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Applications
Battery switch
High-speed line driver
High-side load switch
Switching circuits
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | VESD (kV) (kV) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth @25 C [min] (V) | VGSth [typ] (V) | VGSth [max] @25 C (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMX800UPE | SOT8013 | DFN0603-3 | Production | P | 1 | -30 | 8 | 850 | 900 | 2000 | 150 | -0.9 | 0.4 | 1.4 | 0.3 | -0.5 | -0.7 | -1 | N | 124 | 12 | 2023-03-20 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMX800UPE | PMX800UPEZ (934662516317) |
Active | P |
DFN0603-3 (SOT8013) |
SOT8013 | SOT8013_317 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMX800UPE | PMX800UPEZ | PMX800UPE |
|
|
Series
文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMX800UPE | 30 V, P-channel Trench MOSFET | Data sheet | 2023-03-20 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| AN90013 | Recommendations for Printed Circuit Board assembly of DFN0603-3 (SOT8013) | Application note | 2020-04-29 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT8013 | 3D model for products with SOT8013 package | Design support | 2022-06-02 |
| Compact-2-in-1-ESD-protection-for-high-speed-data-lines_CN | 高速數(shù)據(jù)線的 緊湊型二合一 TrEOS保護(hù) | Leaflet | 2021-02-22 |
| Compact-2-in-1-TrEOS-protection-for-high-speed-data-lines | ESD Protection for HDMI USB and Thunderbolt in DFN0603-3 | Leaflet | 2021-02-01 |
| RS2919_DFN0603-3-Combi | RS2919_DFN0603-3-Combi | Marcom graphics | 2021-03-18 |
| SOT8013 | DFN0603-3; plastic, ultra small and leadless full encapsulated package; 3 terminals; 0.225 mm pitch; 0.63 mm x 0.33 mm x 0.25 mm body | Package information | 2020-04-21 |
| SOT8013_317 | DFN0603-3; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2024-04-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT8013 | 3D model for products with SOT8013 package | Design support | 2022-06-02 |
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PMX800UPE | PMX800UPEZ | 934662516317 | Active | SOT8013_317 | 15,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.