可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PSMN2R3-80SSF | PSMN2R3-80SSFJ | 934662272118 | SOT1235 | 訂單產(chǎn)品 |
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Click here for more informationPSMN2R3-80SSF
NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package
NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
不建議用在新設(shè)計(jì)中(NRND)。
Features and benefits
Low Qrr for higher efficiency and lower spiking
240 Amps ID(max) continuous current rating
Low QG × RDSon FOM for high efficiency switching applications
Strong avalanche energy rating (Eas)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK88 package
Applications
Synchronous rectifier in AC-DC and DC-DC
Primary side switch in DC-DC
BLDC motor control
Full-bridge and half-bridge applications
Battery protection
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PSMN2R3‑80SSF
|
SOT1235 | LFPAK88 | Not for design in | N | 1 | 80 | 2.3 | 175 | 240 | 22 | 123 | 341 | 47 | 3 | N | 8800 | 2550 | 2020-06-15 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
PSMN2R3‑80SSF
|
PSMN2R3‑80SSFJ (934662272118) |
Active | X2F3S80S |
LFPAK88 (SOT1235) |
SOT1235 | SOT1235_118 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
|
PSMN2R3‑80SSF
|
PSMN2R3‑80SSFJ | PSMN2R3-80SSF |
|
|
文檔 (25)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN2R3-80SSF | NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package | Data sheet | 2024-07-03 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2025-09-08 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2025-09-08 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2025-09-30 |
| AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2025-09-10 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2025-09-08 |
| AN90019 | LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout | Application note | 2020-07-20 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK88_sot1235_mk | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Marcom graphics | 2019-04-10 |
| PSMN2R3-80SSF_V1 | PSMN2R3-80SSF Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2024-08-05 |
| SOT1235 | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Package information | 2022-05-30 |
| SOT1235_118 | LFPAK88; Reel pack, SMD, 13"; Q1/T1 standard product orientation; Orderable part number ending ,118 or Z; Ordering code (12NC) ending 118 | Packing information | 2020-04-21 |
| T12_SOT1235_PSMN2R3-80SSF_Nexperia_Quality_Reliability_document | PSMN2R3-80SSF Quality document | Quality document | 2024-08-01 |
| CauerModel_PSMN2R3-80SSF | Cauer model PSMN2R3-80SSF | Thermal model | 2024-07-03 |
| FosterModel_PSMN2R3-80SSF | Foster model PSMN2R3-80SSF | Thermal model | 2024-07-03 |
| PSMN2R3-80SSF | PSMN2R3-80SSF RC thermal model | Thermal model | 2024-07-03 |
| PSMN2R3-80SSF_Cauer | PSMN2R3-80SSF Cauer model | Thermal model | 2024-07-03 |
| PSMN2R3-80SSF_Foster | PSMN2R3-80SSF Foster model | Thermal model | 2024-07-03 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| PSMN2R3-80SSF_V1 | PSMN2R3-80SSF Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2024-08-05 |
| CauerModel_PSMN2R3-80SSF | Cauer model PSMN2R3-80SSF | Thermal model | 2024-07-03 |
| FosterModel_PSMN2R3-80SSF | Foster model PSMN2R3-80SSF | Thermal model | 2024-07-03 |
| PSMN2R3-80SSF | PSMN2R3-80SSF RC thermal model | Thermal model | 2024-07-03 |
| PSMN2R3-80SSF_Cauer | PSMN2R3-80SSF Cauer model | Thermal model | 2024-07-03 |
| PSMN2R3-80SSF_Foster | PSMN2R3-80SSF Foster model | Thermal model | 2024-07-03 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
訂購、定價(jià)與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PSMN2R3‑80SSF | PSMN2R3‑80SSFJ | 934662272118 | Active | SOT1235_118 | 2,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.