可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PSMN4R1-60YL | PSMN4R1-60YLX | 934069893115 | SOT669 | 訂單產(chǎn)品 |
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N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
Logic level gate operation
Avalanche rated, 100% tested
LFPAK provides maximum power density in a Power SO8 package
Applications
Synchronous rectifier in LLC topology
Chargers & adaptors with Vout < 10 V
Fast charge & USB-PD applications
Battery powered motor control
LED lighting & TV backlight
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN4R1‑60YL | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 60 | 4.1 | 4.8 | 175 | 100 | 18.1 | 103 | 238 | 28 | 1.7 | N | 5890 | 506 | 2015-10-12 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN4R1‑60YL | PSMN4R1‑60YLX (934069893115) |
Active | 4R1L60 |
LFPAK56; Power‑SO8 (SOT669) |
SOT669 |
WAVE_BG-BD-1
|
SOT669_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN4R1‑60YL | PSMN4R1‑60YLX | PSMN4R1-60YL |
|
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Series
文檔 (20)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN4R1-60YL | N-channel 60 V, 4.1 m? logic level MOSFET in LFPAK56 | Data sheet | 2018-04-03 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11160 | Designing RC Snubbers | Application note | 2025-09-10 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2025-03-20 |
| SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
| T6_SOT669_PSMN4R1-60YL_Nexperia_Quality_document | PSMN4R1-60YL Quality document | Quality document | 2022-10-12 |
| PSMN4R1-60YL | PSMN4R1-60YL SPICE model | SPICE model | 2016-04-01 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
| PSMN4R1-60YL_RC_Thermal_Model | PSMN4R1-60YL Thermal design model | Thermal design | 2021-01-18 |
| PSMN4R1-60YL | PSMN4R1-60YL Thermal model | Thermal model | 2016-04-01 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN4R1-60YL | PSMN4R1-60YL SPICE model | SPICE model | 2016-04-01 |
| PSMN4R1-60YL_RC_Thermal_Model | PSMN4R1-60YL Thermal design model | Thermal design | 2021-01-18 |
| PSMN4R1-60YL | PSMN4R1-60YL Thermal model | Thermal model | 2016-04-01 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PSMN4R1‑60YL | PSMN4R1‑60YLX | 934069893115 | Active | SOT669_115 | 1,500 |
|
樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.