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NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package
NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications.
Features and benefits
Low Qrr for higher efficiency and lower spiking
Qualified to 175 °C
Low QG x RDSon FOM for high efficiency switching applications
Strong avalanche energy rating (Eas)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK56 package
Wave-solderable LFPAK56 package
Applications
Synchronous rectifier in AC-DC and DC-DC
BLDC motor control
USB-PD and mobile fast-charge adapters
LED lighting
Full-bridge and half-bridge applications
Flyback and resonant topologies
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN8R7‑100YSF | SOT669 | LFPAK56; Power-SO8 | End of life | N | 1 | 100 | 9 | 175 | 90 | 7.5 | 38.5 | 198 | 52.6 | 3.1 | N | 2758 | 532 | 2017-03-24 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN8R7‑100YSF | PSMN8R7‑100YSFX (934071221115) |
Withdrawn / End-of-life | 8F7S10 |
LFPAK56; Power‑SO8 (SOT669) |
SOT669 |
WAVE_BG-BD-1
|
SOT669_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN8R7‑100YSF | PSMN8R7‑100YSFX | PSMN8R7‑100YSF |
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文檔 (24)
| 文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PSMN8R7-100YSF | NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package | Data sheet | 2018-03-13 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11160 | Designing RC Snubbers | Application note | 2025-09-10 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2025-09-08 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2025-09-30 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2025-03-20 |
| Reliability_information_t8_sot669 | Reliability qualification information | Quality document | 2022-09-16 |
| T8_SOT669_PSMN8R7-100YSF_Nexperia_Quality_document | PSMN8R7-100YSF Quality document | Quality document | 2022-09-20 |
| PSMN8R7-100YSF | PSMN8R7-100YSF SPICE model | SPICE model | 2017-07-19 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
| PSMN8R7-100YSF_RCthermal | PSMN8R7-100YSF Thermal model | Thermal design | 2017-07-19 |
| PSMN8R7-100YSF | PSMN8R7-100YSF Thermal model | Thermal model | 2017-07-19 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| PSMN8R7-100YSF | PSMN8R7-100YSF SPICE model | SPICE model | 2017-07-19 |
| PSMN8R7-100YSF_RCthermal | PSMN8R7-100YSF Thermal model | Thermal design | 2017-07-19 |
| PSMN8R7-100YSF | PSMN8R7-100YSF Thermal model | Thermal model | 2017-07-19 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.