可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| PBSS5260QA-Q | PBSS5260QA-QZ | 934669908147 | SOT1215 | 訂單產(chǎn)品 |
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Click here for more informationPBSS5260QA-Q
60 V, 1.7 A PNP low VCEsat transistor
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP complement: PBSS4260QA-Q
Features and benefits
Very Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirments
Solderable side pads
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [min] (MHz) | fT [typ] (MHz) | RCEsat@IC [typ] (mΩ) | RCEsat@IC [max] (mΩ) | VCEsat [max] (mV) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5260QA‑Q | SOT1215 | DFN1010D-3 | 1.1 x 1 x 0.37 | PNP | 1000 | -60 | -1.7 | -2.5 | 160 | 250 | 100 | 150 | 195 | 280 | -700 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5260QA‑Q | PBSS5260QA‑QZ (934669908147) |
Active | 10 00 10 |
DFN1010D‑3 (SOT1215) |
SOT1215 | SOT1215_147 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS5260QA‑Q | PBSS5260QA‑QZ | PBSS5260QA-Q |
|
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Series
文檔 (8)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PBSS5260QA-Q | 60 V, 1.7 A PNP low VCEsat transistor | Data sheet | 2025-07-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1215 | 3D model for products with SOT1215 package | Design support | 2019-10-07 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1010D-3_SOT1215_mk | plastic, thermal enhanced ultra thin small outline package; 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body | Marcom graphics | 2017-01-28 |
| SOT1215 | plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body | Package information | 2022-05-27 |
| SOT1215_147 | DFN1010D-3; Reel pack, SMD, 7"; Q2/T3 standard product orientation; Orderable part number ending ,147 or Z; Ordering code (12NC) ending 147 | Packing information | 2020-04-21 |
| PBSS5260QA-Q_Nexperia_Product_Reliability | PBSS5260QA-Q Nexperia Product Reliability | Quality document | 2025-05-27 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| SOT1215 | 3D model for products with SOT1215 package | Design support | 2019-10-07 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| PBSS5260QA‑Q | PBSS5260QA‑QZ | 934669908147 | Active | SOT1215_147 | 5,000 |
|
樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.