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Click here for more informationPDTD123YK
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm
500 mA NPN Resistor-Equipped Transistors (RET) family.
Features and benefits
- Built-in bias resistors
- Simplifies circuit design
- 500 mA output current capability
- Reduces component count
- Reduces pick and place costs
- ±10 % resistor ratio tolerance
- AEC-Q101 qualified
Applications
- Digital application in automotive and industrial segment
- Controlling IC inputs
- Cost saving alternative for BC817 series in digital applications
- Switching loads
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) |
|---|---|---|---|
| PDTD123YK | SOT346 | SMT3; MPAK | 2.9 x 1.5 x 1.15 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PDTD123YK | PDTD123YK,115 (934058972115) |
Obsolete | no package information | ||||
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PDTD123YK | PDTD123YK,115 | PDTD123YK |
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文檔 (3)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PDTD123Y_SER | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm | Data sheet | 2009-11-26 |
| LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
| PDTD123YK | PDTD123YK SPICE model | SPICE model | 2025-07-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PDTD123YK | PDTD123YK SPICE model | SPICE model | 2025-07-10 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.