可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PMEG060T100CLPE-Q | PMEG060T100CLPE-QZ | 934662720139 | SOT1289B | 訂單產(chǎn)品 |
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Click here for more informationPMEG060T100CLPE-Q
60 V, 2 x 5 A dual common cathode low leakage current Trench Schottky barrier rectifier
Trench dual Schottky barrier rectifier in common cathode configuration encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package.
Features and benefits
Reverse voltage: VR ≤ 60 V
Forward current: IF ≤ 5 A (per diode)
Low forward voltage
Low leakage current due to Trench Schottky technology
Power and flat lead SMD plastic package
Package height typical 0.95 mm
High power capability due to clip-bond technology
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
Freewheeling applications
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | VR [max] (V) | IF(AV) per diode; [max] (A) | Nr of functions | Configuration | Remark |
|---|---|---|---|---|---|---|---|---|
| PMEG060T100CLPE‑Q | SOT1289B | CFP15B | 5.8 x 4.3 x 0.95 | 60.0 | 5.0 | dual | common cathode | Trench technology |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMEG060T100CLPE‑Q | PMEG060T100CLPE‑QZ (934662720139) |
Active | 060T L10C |
CFP15B (SOT1289B) |
SOT1289B |
WAVE_BG-BD-1
|
SOT1289B_139 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMEG060T100CLPE‑Q | PMEG060T100CLPE‑QZ | PMEG060T100CLPE-Q |
|
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文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMEG060T100CLPE-Q | 60 V, 2 x 5 A dual common cathode low leakage current Trench Schottky barrier rectifier | Data sheet | 2024-07-15 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1289B | 3D model for products with SOT1289B package | Design support | 2020-01-22 |
| RS2624_CFP15BSide | RS2624_CFP15BSide | Marcom graphics | 2021-03-11 |
| SOT1289B | plastic, thermal enhanced ultra thin SMD package; 3leads; 2.13?mm pitch; 5.8 x 4.3 x 0.95 mm body | Package information | 2023-06-02 |
| SOT1289B_139 | CFP15B; Reel pack for SMD, 13"; Q4/T2 product orientation | Packing information | 2020-09-02 |
| PMEG060T100CLPE-Q_Nexperia_Product_Reliability | PMEG060T100CLPE-Q Nexperia Product Reliability | Quality document | 2025-05-27 |
| TN90007 | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
| TN90007 | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT1289B | 3D model for products with SOT1289B package | Design support | 2020-01-22 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PMEG060T100CLPE‑Q | PMEG060T100CLPE‑QZ | 934662720139 | Active | SOT1289B_139 | 5,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.