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Click here for more informationBAW56T
High-speed switching diodes
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Features and benefits
- High switching speed: trr ≤ 4 ns
- Low capacitance: Cd ≤ 2 pF
- Low leakage current
- Reverse voltage: VR ≤ 90 V
- Small SMD plastic packages
- AEC-Q101 qualified
Applications
- High-speed switching
- General-purpose switching
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) |
|---|---|---|---|
| BAW56T | SOT416 | SC-75 | 1.6 x 0.75 x 0.9 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BAW56T | BAW56T,115 (934054726115) |
Obsolete |
SC‑75 (SOT416) |
SOT416 | SOT416_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BAW56T | BAW56T,115 | BAW56T |
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文檔 (6)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LSYMDIO | Letter Symbols - Diodes General | Other type | 1999-04-30 |
| SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2025-01-31 |
| BAW56T | BAW56T SPICE model | SPICE model | 2012-07-22 |
| BAW56T | BAW56T SPICE model | SPICE model | 2025-10-11 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.