可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PESD5V0V1BLD-Q | PESD5V0V1BLD-QYL | 934664978315 | SOD882D | 訂單產(chǎn)品 |
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Click here for more informationPESD5V0V1BLD-Q
Very low capacitance bidirectional ESD protection diode
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Features and benefits
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Very low diode capacitance: Cd = 11 pF
Max. peak pulse power: PPPM = 45 W
Low clamping voltage: VCL = 12.5 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 4.8 A
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
SIM card protection
Communication systems
Portable electronics
10/100 Mbit/s Ethernet
FireWire
參數(shù)類型
| 型號 | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|---|---|
| PESD5V0V1BLD‑Q | DFN1006D-2 | 1 | Bidirectional | 5 | 11 | 30 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD5V0V1BLD‑Q | PESD5V0V1BLD‑QYL (934664978315) |
Active | 0111 0000 |
DFN1006D‑2 (SOD882D) |
SOD882D | SOD882D_315 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PESD5V0V1BLD‑Q | PESD5V0V1BLD‑QYL | PESD5V0V1BLD-Q |
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文檔 (9)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD5V0V1BLD-Q | Very low capacitance bidirectional ESD protection diode | Data sheet | 2022-05-31 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD882D | 3D model for products with SOD882D package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006D-2_SOD882D_mk | plastic, leadless ultra small plastic package; 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.4 mm body | Marcom graphics | 2017-01-28 |
| SOD882D | leadless ultra small plastic package with side-wettable flanks (SWF); 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.4 mm body | Package information | 2022-05-20 |
| SOD882D_315 | DFN1006D-2; Leadless ultra small plastic package; Reel pack, SMD, 7"; Q1/T1 standard product orientation; Orderable part number ending ,315 or YL; Ordering code (12NC) ending 315 | Packing information | 2020-04-21 |
| PESD5V0V1BLD-Q_Nexperia_Product_Reliability | PESD5V0V1BLD-Q Nexperia Product Reliability | Quality document | 2025-05-30 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOD882D | 3D model for products with SOD882D package | Design support | 2020-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PESD5V0V1BLD‑Q | PESD5V0V1BLD‑QYL | 934664978315 | Active | SOD882D_315 | 10,000 |
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樣品
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如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.