可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PESD4USB5UBTBR-Q | PESD4USB5UBTBR-QZ | 934665067471 | SOT1176-2 | 訂單產(chǎn)品 |
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Click here for more informationPESD4USB5UBTBR-Q
Extremely low capacitance unidirectional ESD protection diode array
This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD).
The device is encapsulated in a leadless small DFN2510A-10 (SOT1176-2) plastic package and provides ESD protection up to 15 kV exceeding IEC 61000-4-2 level 4 and fulfilling ISO 10605.
Features and benefits
Unidirectional ESD protection for four signal lines
VRWM = 5 V device
Extremely low clamping voltage to protect sensitive I/Os
Extremely low clamping voltage: 2.8 V for 8 A 100 ns TLP and 4.4 V for 16 A 100 ns TLP
IEC 61000-4-4 robust up to 36 A into a 50 Ohm termination (1.8 kV)
IEC 61000-4-5 (surge): IPP = 8.2 A peak pulse (average measured)
Typical line capacitance of only 0.29 pF
ESD protection up to ±15 kV according to IEC 61000-4-2
Leadless ultra small DFN2510A-10 (SOT1176-2) surface mount package
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Infotainment applications: USB 2.0, USB 3.2 and HDMI 2.1
Automotive A/V monitors, display and cameras
SerDes: GMSL, APIX, FPD-Link and LVDS
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | Configuration | Nr of lines | VRWM (V) (V) | Cd [typ] (pF) | IPPM [max] (A) | VESD (kV) (kV) |
|---|---|---|---|---|---|---|---|---|---|
| PESD4USB5UBTBR‑Q | SOT1176-2 | DFN2510A-10 | 1.0 x 2.5 x 0.5 | Unidirectional | 4 | 5 | 0.29 | 6.5 | 15 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD4USB5UBTBR‑Q | PESD4USB5UBTBR‑QZ (934665067471) |
Active | Q5 |
DFN2510A‑10 (SOT1176-2) |
SOT1176-2 | 暫無(wú)信息 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PESD4USB5UBTBR‑Q | PESD4USB5UBTBR‑QZ | PESD4USB5UBTBR-Q |
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文檔 (5)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD4USB5UBTBR-Q | Extremely low capacitance unidirectional ESD protection diode array | Data sheet | 2023-10-26 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT1176-2 | 3D model for products with SOT1176-2 package | Design support | 2023-02-07 |
| SOT1176-2 | plastic, extremely thin small outline package; no leads; 10 terminals; body 1.0 x 2.5 x 0.5 mm | Package information | 2021-09-08 |
| PESD4USB5UBTBR-Q_Nexperia_Product_Reliability | PESD4USB5UBTBR-Q Nexperia Product Reliability | Quality document | 2025-05-30 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT1176-2 | 3D model for products with SOT1176-2 package | Design support | 2023-02-07 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PESD4USB5UBTBR‑Q | PESD4USB5UBTBR‑QZ | 934665067471 | Active | 暫無(wú)信息 | 5,000 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.