可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| BUK6Q100-80P | BUK6Q100-80PJ | 934670269118 | SOT8002-3 | 訂單產(chǎn)品 |
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Click here for more informationBUK6Q100-80P
80 V, P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33-WF (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
Side-wettable flanks for optical solder inspection
Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)
AEC-Q101 qualified
Applications
Reverse polarity protection
High-speed line driver
High-side load switch
Relay driver
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK6Q100‑80P | SOT8002-3 | MLPAK33-WF | Production | P | 1 | -80 | 100 | 137 | 175 | 5 | 21.5 | 56 | 27 | -2 | Y | 1090 | 72 | 2025-09-30 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK6Q100‑80P | BUK6Q100‑80PJ (934670269118) |
Active | NXG |
MLPAK33‑WF (SOT8002-3) |
SOT8002-3 | 暫無信息 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK6Q100‑80P | BUK6Q100‑80PJ | BUK6Q100-80P |
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Series
文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK6Q100-80P | 80 V, P-channel Trench MOSFET | Data sheet | 2025-10-01 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2025-10-21 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2025-10-21 |
| AN50001 | Reverse battery protection in automotive applications | Application note | 2025-10-21 |
| AN50019 | Thermal boundary condition study on MOSFET packages and PCB substrates | Application note | 2025-10-21 |
| AN50020 | MOSFETs in Power Switch applications | Application note | 2025-10-21 |
| AN90009 | Leakage of small-signal MOSFETs | Application note | 2025-10-21 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT8002-3 | plastic thermal enhanced surface mounted package with side-wettable flanks (SWF); mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body | Package information | 2025-08-06 |
| BUK6Q100-80P | BUK6Q100-80P SPICE model | SPICE model | 2025-11-04 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK6Q100-80P | BUK6Q100-80P SPICE model | SPICE model | 2025-11-04 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| BUK6Q100‑80P | BUK6Q100‑80PJ | 934670269118 | Active | 暫無信息 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.