可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| PSC20120J-Q | PSC20120J-QJ | 934670115118 | SOT8018 | 訂單產(chǎn)品 |
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Click here for more informationPSC20120J-Q
1200 V, 20 A SiC Schottky diode in D2PAK R2P for automotive applications
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Features and benefits
Reduced system costs
Temperature independent fast and smooth switching performance
Outstanding figure of merit (Qc x VF)
High IFSM capability
High power density
System miniaturization
Reduced EMI
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Traction inverter
DC-DC converter
Onboard charger
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | VRRM [max] (V) | VF [max] (V) | @IF [max] @140 C (A) | IR [max] (μA) | @VR (V) | IFSM [max] (A) | Nr of functions | Configuration | Ptot [max] (W) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSC20120J‑Q | SOT8018 | D2PAK R2P | 8.8 x 10.35 x 4.46 | 1200 | 1.8 | 20 | 180 | 1200 | 710 | single | single | 200 | Y |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSC20120J‑Q | PSC20120J‑QJ (934670115118) |
Active | PSC20120Q |
D2PAK R2P (SOT8018) |
SOT8018 |
WAVE_BG-BD-1
|
SOT8018_118 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSC20120J‑Q | PSC20120J‑QJ | PSC20120J-Q |
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文檔 (8)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSC20120J-Q | 1200 V, 20 A SiC Schottky diode in D2PAK R2P for automotive applications | Data sheet | 2025-07-28 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT8018 | 3D model for products with SOT8018 package | Design support | 2023-03-13 |
| SOT8018-D2PAK-R2P_mk | Plastic, single-ended surface-mounted package (D2PAK R2P); Real-2-Pin configuration; 5.08 mm pitch; 8.8 mm x 10.35 mm x 4.46 mm body | Marcom graphics | 2025-10-07 |
| SOT8018 | Plastic, single-ended surface-mounted package (D2PAK R2P); Real-2-Pin configuration; 5.08 mm pitch; 8.8 mm x 10.35 mm x 4.46 mm body | Package information | 2024-05-02 |
| SOT8018_118 | D2PAK; Reel pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2024-05-30 |
| TN90007 | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT8018 | 3D model for products with SOT8018 package | Design support | 2023-03-13 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| PSC20120J‑Q | PSC20120J‑QJ | 934670115118 | Active | SOT8018_118 | 800 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.