可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| GANE3R9-150QBA | GANE3R9-150QBAZ | 934667633332 | SOT8091-1 | 訂單產(chǎn)品 |
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Click here for more informationGANE3R9-150QBA
150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
The GANE3R9-150QBA? is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Features and benefits
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
Applications
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
High frequency DC-to-DC converters in 48 V systems
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANE3R9‑150QBA | SOT8091-1 | VQFN7 | Production | 1 | 150 | 3.9 | 150 | 3.5 | 65 | 1.1 | 2200 | 900 | 2024-04-22 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GANE3R9‑150QBA | GANE3R9‑150QBAZ (934667633332) |
Active | 3R9 EQBA |
VQFN7 (SOT8091-1) |
SOT8091-1 | SOT8091-1_332 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GANE3R9‑150QBA | GANE3R9‑150QBAZ | GANE3R9‑150QBA |
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文檔 (20)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| GANE3R9-150QBA | 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Data sheet | 2024-04-30 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT8091-1 | very thin quad flatpack; no leads | Package information | 2024-05-29 |
| SOT8091-1_332 | VQFN7; Reel dry pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2024-03-28 |
| GANE3R9-150QBA_LTspice | GANE3R9-150QBA LTspice SPICE model | SPICE model | 2025-07-09 |
| GANE3R9-150QBA_SIMetrix | GANE3R9-150QBA SIMetrix SPICE model | SPICE model | 2025-07-09 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| CauerModel_GANE3R9-150QBA | Cauer model GANE3R9-150QBA | Thermal model | 2024-06-25 |
| FosterModel_GANE3R9-150QBA | Foster model GANE3R9-150QBA | Thermal model | 2024-06-25 |
| GANE3R9-150QBA | GANE3R9-150QBA RC thermal model | Thermal model | 2024-06-25 |
| GANE3R9-150QBA_Cauer | GANE3R9-150QBA Cauer model | Thermal model | 2024-06-25 |
| GANE3R9-150QBA_Foster | GANE3R9-150QBA Foster model | Thermal model | 2024-06-25 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮書(shū): 功率GaN技術(shù)： 高效功率轉(zhuǎn)換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| GANE3R9-150QBA_LTspice | GANE3R9-150QBA LTspice SPICE model | SPICE model | 2025-07-09 |
| GANE3R9-150QBA_SIMetrix | GANE3R9-150QBA SIMetrix SPICE model | SPICE model | 2025-07-09 |
| CauerModel_GANE3R9-150QBA | Cauer model GANE3R9-150QBA | Thermal model | 2024-06-25 |
| FosterModel_GANE3R9-150QBA | Foster model GANE3R9-150QBA | Thermal model | 2024-06-25 |
| GANE3R9-150QBA | GANE3R9-150QBA RC thermal model | Thermal model | 2024-06-25 |
| GANE3R9-150QBA_Cauer | GANE3R9-150QBA Cauer model | Thermal model | 2024-06-25 |
| GANE3R9-150QBA_Foster | GANE3R9-150QBA Foster model | Thermal model | 2024-06-25 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| GANE3R9‑150QBA | GANE3R9‑150QBAZ | 934667633332 | Active | SOT8091-1_332 | 2,500 |
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樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.