種類(lèi)繁多的雙極晶體管助您輕松滿(mǎn)足系統(tǒng)需求。產(chǎn)品線(xiàn)涵蓋基礎(chǔ)雙極晶體管模塊，以及一系列節(jié)省空間和成本的帶電阻晶體管，直至我們突破性的小信號(hào)系列低壓降電壓器件。
我們豐富的二極管產(chǎn)品組合為您提供當(dāng)今市場(chǎng)所需的靈活性——無(wú)論是簡(jiǎn)單的齊納二極管、高效的肖特基整流器、快速恢復(fù)二極管還是可控雪崩開(kāi)關(guān)二極管。
涵蓋靜電放電保護(hù)、瞬態(tài)電壓抑制器件、共模扼流圈及電磁干擾濾波器，Nexperia的保護(hù)技術(shù)持續(xù)升級(jí)，在業(yè)界最小封裝中提供最高級(jí)別的防護(hù)。
Nexperia提供種類(lèi)豐富的低/中壓（12-200 V）P溝道和N溝道硅MOSFET產(chǎn)品組合，采用多種節(jié)省空間且高效的封裝方案。
Nexperia的1200V碳化硅（SiC）MOSFET重新定義了安全、穩(wěn)健且可靠的電源開(kāi)關(guān)標(biāo)準(zhǔn)，成為電動(dòng)汽車(chē)充電基礎(chǔ)設(shè)施、光伏逆變器及電機(jī)驅(qū)動(dòng)領(lǐng)域的首選產(chǎn)品。
針對(duì)各類(lèi)高壓（650 V）和低壓（40-150 V）應(yīng)用場(chǎng)景，Nexperia氮化鎵場(chǎng)效應(yīng)晶體管憑借更低的導(dǎo)通損耗與開(kāi)關(guān)損耗，實(shí)現(xiàn)了最快速的過(guò)渡/開(kāi)關(guān)能力、最佳的功率效率以及更高的功率密度。
為滿(mǎn)足高效高壓電源轉(zhuǎn)換和電機(jī)驅(qū)動(dòng)日益增長(zhǎng)的需求，Nexperia的IGBT采用堅(jiān)固且經(jīng)濟(jì)高效的載流子存儲(chǔ)溝槽柵極（CSTBT）先進(jìn)場(chǎng)截止（FS）結(jié)構(gòu)。
除全面的邏輯功能、模擬開(kāi)關(guān)和I2C接口產(chǎn)品組合外，Nexperia還提供日益豐富的功率IC產(chǎn)品線(xiàn)，助力打造創(chuàng)新解決方案，專(zhuān)注于降低客戶(hù)物料清單成本，提升系統(tǒng)效率與可靠性。
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Click here for more information650 V, 50 A trench field-stop IGBT with full rated silicon diode
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Device current is rated at 50 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature 175 °C
Fully rated and fast reverse recovery diode
HV-H3TRB qualified
Power inverters such as
Uninterruptible Power Supply (UPS) inverter
EV charging converter
Power Factor Correction (PFC)
Induction heating
Welding
| 型號(hào) | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|
| NGW50T65H3DFP | Production | 650 | 50 | HS | -40 | 175 | SOT429-5 | TO-247-3 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NGW50T65H3DFP | NGW50T65H3DFPQ (934668244127) |
Active | W50T65H3DFP |
TO‑247‑3 (SOT429-5) |
SOT429-5 | 暫無(wú)信息 | |
| NGW50T65H3DFP/A00Z (934671639347) |
Samples available / Development | W50T65H3DFP | 暫無(wú)信息 | ||||
| NGW50T65H3DFPZ (934668244347) |
Development | W50T65H3DFP | 暫無(wú)信息 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NGW50T65H3DFP | NGW50T65H3DFPQ | NGW50T65H3DFP |
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| NGW50T65H3DFP | NGW50T65H3DFP/A00Z | NGW50T65H3DFP |
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| NGW50T65H3DFP | NGW50T65H3DFPZ | NGW50T65H3DFP |
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| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| NGW50T65H3DFP | 650 V, 50 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2025-03-03 |
| AN90042 | Nexperia 650 V (G3) IGBT product introduction | Application note | 2025-08-06 |
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
| SOT429-5 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3 | Package information | 2025-11-03 |
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| NGW50T65H3DFP | NGW50T65H3DFPQ | 934668244127 | Active | 暫無(wú)信息 | 450 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.