用于直流電機(jī)控制的ASFET——高IDS專為滿足緊湊型電池供電工具的需求而設(shè)計：
- ID（最大）——直徑為500 µm的內(nèi)部電線，具有多個接合點，采用LFPAK88封裝時可提供高達(dá)400 A的電流，
采用LFPAK56封裝時可提供高達(dá)300 A的電流，采用TO-220封裝時可提供高達(dá)150 A的電流，
可實現(xiàn)電機(jī)的最大扭矩并可靠處理高負(fù)載和失速電流情況 - LFPAK56行業(yè)領(lǐng)先的低Rth(j-mb)確保了即使在最緊湊的設(shè)計中，MOSFET結(jié)溫也能保持在可控范圍內(nèi)
- Nexperia的低導(dǎo)通電阻特性提供了更高的效率，確保了更長的電池使用壽命
- 與所有電機(jī)應(yīng)用一樣，存在一定程度的系統(tǒng)振動，無法減弱。LFPAK具有獨特的電路板級可靠性和穩(wěn)健性。
- 許多器件以邏輯電平的方式提供，以便直接通過微控制器進(jìn)行開關(guān)
精選產(chǎn)品
參數(shù)搜索
High ID for motor overload conditions
數(shù)據(jù)加載中，請稍候...參數(shù)搜索不可用。
產(chǎn)品
| 型號 | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| PSMN1R0-40SSH | N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN1R0-40YLD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R0-40YSH | N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Production | |
| PSMNR51-25YLH | N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR60-25YLH | N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMNR70-40SSH | N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMNR90-40YLH | N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Production |
Visit our documentation center for all documentation
Application note (3) |
|||
|---|---|---|---|
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| AN90059.pdf | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2025-09-08 |
| AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2025-09-08 |
Leaflet (2) |
|||
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| nexperia_document_leaflet_LFPAK88_2022_CHN.pdf | LFPAK88 將功率密度提升到新高度 | Leaflet | 2022-03-10 |
| nexperia_document_leaflet_LFPAK88_2022.pdf | LFPAK88 - Driving power-density to the next level | Leaflet | 2022-03-09 |