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30 V, single P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Alternatives
Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 kV
- Ultra thin package profile with 0.37 mm height
Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth @25 C [min] (V) | VGSth [typ] (V) | VGSth [max] @25 C (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NX3008PBKMB | SOT883B | DFN1006B-3 | End of life | P | 1 | -30 | 8 | 4100 | 6500 | 150 | -0.3 | 0.09 | 0.55 | 0.36 | -0.6 | -0.9 | -1.1 | N | 31 | 6.5 | 2012-05-11 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NX3008PBKMB | NX3008PBKMB,315 (934065865315) |
Obsolete | 0000 0100 |
DFN1006B‑3 (SOT883B) |
SOT883B | SOT883B_315 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NX3008PBKMB | NX3008PBKMB,315 | NX3008PBKMB |
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Series
文檔 (16)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| NX3008PBKMB | 30 V, single P-channel Trench MOSFET | Data sheet | 2017-05-04 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-10-21 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006B-3_SOT883B_mk | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body | Marcom graphics | 2017-01-28 |
| SOT883B | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body | Package information | 2022-05-20 |
| NX3008PBKMB_08_02_2012 | NX3008PBKMB_08_02_2012 Spice parameter | SPICE model | 2012-04-16 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| NX3008PBKMB_08_02_2012 | NX3008PBKMB_08_02_2012 Spice parameter | SPICE model | 2012-04-16 |
| SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.