可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| BC856BW-Q | BC856BW-QX | 934664501115 | SOT323 | 訂單產(chǎn)品 |
| BC856BW-Q | BC856BW-QF | 934664501135 | SOT323 | 訂單產(chǎn)品 |
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Click here for more informationBC856BW-Q
65 V, 100 mA PNP general-purpose transistors
PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package.
Type number | Package | NPN complement | |
|---|---|---|---|
Nexperia | JEDEC | ||
BC856W-Q | SOT323 | SC-70 | BC846W-Q |
BC856AW-Q | BC846AW-Q | ||
BC856BW-Q | BC846BW-Q | ||
BC857W-Q | BC847W-Q | ||
BC857AW-Q | BC847AW-Q | ||
BC857BW-Q | BC847BW-Q | ||
BC857CW-Q | BC847CW-Q | ||
BC858W-Q | BC848W-Q | ||
Features and benefits
Low current (max. 100 mA)
Low voltage (max. 65 V)
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
General-purpose switching and amplification
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | hFE [max] | TJ [max] (°C) | fT [min] (MHz) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BC856BW‑Q | SOT323 | SC-70 | 2 x 1.25 x 0.95 | PNP | 200.0 | -65.0 | -100.0 | 220.0 | 475.0 | 150 | 100.0 | Y |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BC856BW‑Q | BC856BW‑QX (934664501115) |
Active | 3B% |
SC‑70 (SOT323) |
SOT323 |
WAVE_BG-BD-1
|
SOT323_115 |
| BC856BW‑QF (934664501135) |
Active | 3B% | SOT323_135 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BC856BW‑Q | BC856BW‑QX | BC856BW-Q |
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| BC856BW‑Q | BC856BW‑QF | BC856BW-Q |
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文檔 (11)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| BC856W-Q_BC857W-Q_BC858W-Q | 65 V, 100 mA PNP general-purpose transistors | Data sheet | 2023-07-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT323 | 3D model for products with SOT323 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SC-70_SOT323_mk | plastic, surface-mounted package; 3 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
| SOT323 | plastic, surface-mounted package; 3 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Package information | 2022-05-27 |
| SOT323_115 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2024-06-17 |
| SOT323_135 | Tape reel SMD; standard product orientation 12NC ending 135 | Packing information | 2020-04-27 |
| BC856BW-Q_Nexperia_Product_Reliability | BC856BW-Q Nexperia Product Reliability | Quality document | 2025-05-28 |
| BC856BW-Q | BC856BW-Q SPICE model | SPICE model | 2025-07-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| BC856BW‑Q | BC856BW‑QX | 934664501115 | Active | SOT323_115 | 3,000 |
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| BC856BW‑Q | BC856BW‑QF | 934664501135 | Active | SOT323_135 | 10,000 |
|
樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.