Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more information74ALVT162827DL
20-bit buffer/line driver, non-inverting,with 30Ohm termination resistors (3-State)
The 74ALVT162827 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. It is designed for VCC operation at 2.5 V or 3.3 V with I/O compatibility to 5 V.
The 74ALVT162827 20-bit buffers provide high performance bus interface buffering for wide data/address paths or buses carrying parity. They have NOR Output Enables (nOE1, nOE2) for maximum control flexibility.
The 74ALVT162827 is designed with 30 Ω series resistance in both the pull-up and pull-down output structures. This design reduces line noise in applications such as memory address drivers, clock drivers and bus receivers/transmitters.
Features and benefits
Multiple VCC and GND pins minimize switching noise
5 V I/O Compatible
Live insertion/extraction permitted
3-State output buffers
Outputs include series resistance of 30 Ω making external termination resistors unnecessary
Power-up 3-State
Output capability: ±12 mA
Latch-up protection exceeds 500 mA per Jedec Std 17
ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model
Bus hold data inputs eliminate the need for external pull-up resistors to hold unused inputs
Applications
參數(shù)類型
| 型號 | Package name |
|---|---|
| 74ALVT162827DL | SSOP56 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74ALVT162827DL | 74ALVT162827DL,112 (935210060112) |
Obsolete | ALVT162827 Standard Procedure Standard Procedure |
SSOP56 (SOT371-1) |
SOT371-1 |
SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE |
暫無信息 |
| 74ALVT162827DL,118 (935210060118) |
Obsolete | ALVT162827 Standard Procedure Standard Procedure | 暫無信息 | ||||
| 74ALVT162827DL,512 (935210060512) |
Obsolete | ALVT162827 Standard Procedure Standard Procedure | 暫無信息 | ||||
| 74ALVT162827DL,518 (935210060518) |
Obsolete | ALVT162827 Standard Procedure Standard Procedure | 暫無信息 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74ALVT162827DL | 74ALVT162827DL,112 | 74ALVT162827DL |
|
|
| 74ALVT162827DL | 74ALVT162827DL,118 | 74ALVT162827DL |
|
|
| 74ALVT162827DL | 74ALVT162827DL,512 | 74ALVT162827DL |
|
|
| 74ALVT162827DL | 74ALVT162827DL,518 | 74ALVT162827DL |
|
|
Series
文檔 (8)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74ALVT162827 | 20-bit buffer/line driver; non-inverting; with 30 ??termination resistors;?3-state | Data sheet | 2024-06-25 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| alvt162827 | alvt162827 IBIS model | IBIS model | 2013-04-08 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT371-1 | plastic, shrink small outline package; 56 leads; 0.635 mm pitch; 18.45 mm x 7.5 mm x 2.8 mm body | Package information | 2020-04-21 |
| SSOP-TSSOP-VSO-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
| alvt16 | alvt16 Spice model | SPICE model | 2013-05-07 |
| SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| alvt162827 | alvt162827 IBIS model | IBIS model | 2013-04-08 |
| alvt16 | alvt16 Spice model | SPICE model | 2013-05-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.