可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 74VHCT125D | 74VHCT125D,118 | 935289508118 | SOT108-1 | 訂單產(chǎn)品 |
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Click here for more information74VHCT125D
Quad buffer/line driver; 3-state
The 74VHC125; 74VHCT125 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard JESD7?-?A.
The 74VHC125; 74VHCT125 provides four non-inverting buffer/line drivers with 3-state outputs. The 3-state outputs (nY) are controlled by the output enable input (nOE). A HIGH at nOE causes the outputs to assume a high-impedance OFF-state.
The 74VHC125; 74VHCT125 are identical to the 74VHC126; 74VHCT126 but have active LOW enable inputs.
Features and benefits
Balanced propagation delays
All inputs have a Schmitt-trigger action
Inputs accepts voltages higher than VCC
Input levels:
The 74VHC125 operates with CMOS logic levels
The 74VHCT125 operates with TTL logic levels
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
參數(shù)類型
| 型號 | VCC (V) | Logic switching levels | Output drive capability (mA) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 74VHCT125D | 4.5?-?5.5 | TTL | ± 8 | 60 | 4 | low | -40~125 | 105 | 17.3 | 63 | SO14 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74VHCT125D | 74VHCT125D,118 (935289508118) |
Active | 74VHCT125D |
SO14 (SOT108-1) |
SOT108-1 |
SO-SOJ-REFLOW
SO-SOJ-WAVE WAVE_BG-BD-1 |
SOT108-1_118 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74VHCT125D | 74VHCT125D,118 | 74VHCT125D |
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Series
文檔 (12)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| 74VHC_VHCT125 | Quad buffer/line driver; 3-state | Data sheet | 2024-04-30 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT108-1 | 3D model for products with SOT108-1 package | Design support | 2020-01-22 |
| 74vhct125 | 74vhct125 IBIS model | IBIS model | 2013-04-08 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SO14_SOT108-1_mk | plastic, small outline package; 14 leads; 1.27 mm pitch; 8.65 mm x 3.9 mm x 1.75 mm body | Marcom graphics | 2017-01-28 |
| SOT108-1 | plastic, small outline package; 14 leads; 1.27 mm pitch; 8.65 mm x 3.9 mm x 1.75 mm body | Package information | 2023-11-07 |
| SOT108-1_118 | SO14; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2024-02-19 |
| 74VHCT125D_Nexperia_Product_Reliability | 74VHCT125D Nexperia Product Reliability | Quality document | 2025-03-20 |
| SO-SOJ-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
| SO-SOJ-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74VHCT125D | 74VHCT125D,118 | 935289508118 | Active | SOT108-1_118 | 2,500 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.