可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 74HCT259BZ | 74HCT259BZX | 935691406115 | SOT8016-1 | 訂單產(chǎn)品 |
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Click here for more information74HCT259BZ
8-bit addressable latch
The 74HC259; 74HCT259 is an 8-bit addressable latch. The device features four modes of operation. In the addressable latch mode, data on the D input is written into the latch addressed by the inputs A0 to A3. The addressed latch will follow the data input, non-addressed latches will retain their previous states. In memory mode, all latches retain their previous states and are unaffected by the data or address inputs. In the 3-to-8 decoding or demultiplexing mode, the addressed output follows the D input and all other outputs are LOW. In the reset mode, all outputs are forced LOW and unaffected by the data or address inputs. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Complies with JEDEC standards:
- JESD8C (2.7 V to 3.6 V)
- JESD7A (2.0 V to 6.0 V)
Combined demultiplexer and 8-bit latch
Serial-to-parallel capability
Output from each storage bit available
Random (addressable) data entry
Easily expandable
Common reset input
Useful as a 3-to-8 active HIGH decoder
Input levels:
For 74HC259: CMOS level
For 74HCT259: TTL level
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|
| 74HCT259BZ | 4.5?-?5.5 | TTL | ± 4 | 20 | low | -40~125 | 95 | 64 | DHXQFN16 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HCT259BZ | 74HCT259BZX (935691406115) |
Active | T259 |
DHXQFN16 (SOT8016-1) |
SOT8016-1 | SOT8016-1_115 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74HCT259BZ | 74HCT259BZX | 74HCT259BZ |
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文檔 (7)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74HC_HCT259 | 8-bit addressable latch | Data sheet | 2024-03-11 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT8016-1 | 3D model for products with SOT8016-1 package | Design support | 2023-02-07 |
| hct259 | 74HCT259 IBIS model | IBIS model | 2022-10-21 |
| SOT8016-1 | plastic, leadless dual in-line compatible thermal enhanced extreme thin quad flat package;no leads; 16 terminals; 0.4 mm pitch; body 2 mm x 2.4 mm x 0.48 mm | Package information | 2023-02-03 |
| SOT8016-1_115 | DHXQFN16; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2025-10-27 |
| 74HCT259BZ_Nexperia_Product_Reliability | 74HCT259BZ Nexperia Product Reliability | Quality document | 2025-03-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
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訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74HCT259BZ | 74HCT259BZX | 935691406115 | Active | SOT8016-1_115 | 3,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.