可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| 74HCT1G08GV | 74HCT1G08GV,125 | 935272021125 | SOT753 | 訂單產(chǎn)品 |
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Click here for more information74HCT1G08GV
2-input AND gate
The 74HC1G08; 74HCT1G08 is a single 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
Alternatives
Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V
CMOS low power dissipation
High noise immunity
Symmetrical output impedance
Balanced propagation delays
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Input levels:
For 74HC1G08: CMOS level
For 74HCT1G08: TTL level
Complies with JEDEC standards:
- JESD8C (2.7 V to 3.6 V)
- JESD7A (2.0 V to 6.0 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from ?40 °C to +85 °C and ?40 °C to +125 °C
參數(shù)類(lèi)型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74HCT1G08GV | 4.5?-?5.5 | TTL | ± 2 | 11 | 36 | 1 | low | -40~125 | 220 | 33 | 131 | TSOP5 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HCT1G08GV | 74HCT1G08GV,125 (935272021125) |
Active | T08 |
TSOP5 (SOT753) |
SOT753 |
WAVE_BG-BD-1
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SOT753_125 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74HCT1G08GV | 74HCT1G08GV,125 | 74HCT1G08GV |
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文檔 (13)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| 74HC_HCT1G08 | 2-input AND gate | Data sheet | 2024-09-23 |
| AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
| AN11044 | Pin FMEA 74HC/74HCT family | Application note | 2019-01-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT753 | 3D model for products with SOT753 package | Design support | 2019-01-22 |
| hct1g08 | 74HCT1G08 IBIS model | IBIS model | 2019-01-09 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT753 | plastic, surface-mounted package; 5 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body | Package information | 2022-05-31 |
| SOT753_125 | TSOP5; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| 74HCT1G08GV_Nexperia_Product_Reliability | 74HCT1G08GV Nexperia Product Reliability | Quality document | 2025-03-20 |
| MAR_SOT753 | MAR_SOT753 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| 74HCT1G08GV | 74HCT1G08GV,125 | 935272021125 | Active | SOT753_125 | 3,000 |
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樣品
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如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.