可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| BC52-10PAS-Q | BC52-10PAS-QX | 934669145115 | SOT1061D | 訂單產(chǎn)品 |
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Click here for more informationBC52-10PAS-Q
60 V, 1 A PNP medium power transistors
PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.
Features and benefits
High collector current capability IC and ICM
Reduced Printed-Circuit Board (PCB) area requirements
Exposed heat sink for excellent thermal and electrical conductivity
Two current gain selections
Leadless very small SMD plastic package with medium power capability
Suitable for Automatic Optical Inspection (AOI) of solder joint
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
High-side switches
Power management
Amplifiers
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) |
|---|---|---|---|
| BC52‑10PAS‑Q | SOT1061D | DFN2020D-3 | 2 x 2 x 0.65 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BC52‑10PAS‑Q | BC52‑10PAS‑QX (934669145115) |
Active | C8 |
DFN2020D‑3 (SOT1061D) |
SOT1061D | SOT1061D_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BC52‑10PAS‑Q | BC52‑10PAS‑QX | BC52-10PAS-Q |
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文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BC52XPAS-Q_SER | 60 V, 1 A PNP medium power transistors | Data sheet | 2024-10-24 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| AN90023_ZH | Thermal performance of DFN packages | Application note | 2021-02-26 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| Nexperia_asset_document_brochure_autoDFN_CN_LR | 小巧輕便的汽車 二極管和晶體管 | Brochure | 2022-04-26 |
| SOT1061D | 3D model for products with SOT1061D package | Design support | 2021-07-30 |
| Nexperia_AutoDFN_factsheet_2022 | Small & light automotive diodes and transistors | Leaflet | 2022-04-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020D-3_SOT1061D_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1061D | plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); no leads; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-10-10 |
| SOT1061D_115 | DFN2020D-3; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-05-29 |
| BC52-10PAS-Q_Nexperia_Product_Reliability | BC52-10PAS-Q Nexperia Product Reliability | Quality document | 2025-05-27 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT1061D | 3D model for products with SOT1061D package | Design support | 2021-07-30 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| BC52‑10PAS‑Q | BC52‑10PAS‑QX | 934669145115 | Active | SOT1061D_115 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.